Datasheet > SSD55N03_11

SSD55N03_11

更新时间： 2024-09-25 09:05:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	788K
描述
55A, 25V, RDS(ON) 6m N-Ch Enhancement Mode Power MOSFET

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SSD55N03_11 数据手册

SSD55N03

55A, 25V, R_DS(ON)6m

Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

TO-252(D-Pack)

DESCRIPTION

The SID55N03 provide the designer with the best

combination of fast switching,ruggedized device design,

low on-resistance and cost-effectiveness. The TO-252

package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage

applications such as DC/DC converters.

FEATURES

ꢁ

Dynamic dv/dt Rating

Simple Drive Requirement

Repetitive Avalanche Rated

Fast Switching

G E

H F

Drain

MARKING

55N03

Millimeter

ꢀꢀꢀꢀ

Date Code

REF.

Min.

Max.

Min.

Max.

Gate

6.4

5.20

2.20

0.45

6.8

5.50

2.40

0.58

7.3

2.30 REF.

0.70

0.50

0.9

0.90

1.1

1.6

PACKAGE INFORMATION

0.43

0.15

0.58

Package

MPQ

LeaderSize

2.40

5.40

0.8

3.0

6.2

1.20

Source

TO-252

2.5K

13’ inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain Current

I_D

T_C=100°C

Pulsed Drain Current ¹

I_DM

P_D

215

62.5

0.5

Total Power Dissipation

Linear Derating Factor

W / °C

Single Pulse Avalanche Energy²

E_AS

I_AS

240

Single Pulse Avalanche Current

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~150

°C

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient

Maximum Thermal Resistance Junction-Case

R_θJA

R_θJC

110

2.0

°C / W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

16-Jun-2011 Rev. A

Page 1 of 4

12 3 4

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