SSD50P03-09D
61A, -30V, RDS(ON) 9mΩ
P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
TO-252(D-Pack)
DESCRIPTION
These miniature surface mount MOSFETs utilize high
cell density process. Low RDS(on) assures minimal power
loss and conserves energy, making this device ideal for
use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in
portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system,
and telephones power system.
A
B
C
D
FEATURES
G E
Low RDS(on) provides higher efficiency and extends
battery life.
K
J
H F
N
O
P
Miniature TO-252 surface mount package saves board
space.
M
High power and current handling capability.
Extended VGS range (±25) for battery pack applications.
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
E
F
6.4
5.20
2.20
0.45
6.8
2.40
5.40
0.8
6.8
5.50
2.40
0.58
7.3
3.0
6.2
1.20
J
K
M
N
O
P
2.30 REF.
0.70
0.50
0.9
0.90
1.1
1.6
PACKAGE INFORMATION
0
0.43
0.15
0.58
Package
MPQ
LeaderSize
G
H
TO-252
2.5K
13’ inch
Drain
Gate
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VDS
RATINGS
UNIT
Drain-Source Voltage
-30
±25
V
V
Gate-Source Voltage
VGS
Continuous Drain Current 1
Pulsed Drain Current 2
ID @TA=25℃
IDM
61
A
±40
A
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
IS
-30
A
PD @TA=25℃
TJ, TSTG
50
W
°C
Operating Junction and Storage Temperature Range
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient 1
RθJA
RθJC
50
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
3.0
Notes:
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
02-Dec-2010 Rev.A
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