Datasheet > SSD50N08-14D

SSD50N08-14D

更新时间： 2024-11-14 01:16:15

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	474K
描述
N-Ch Enhancement Mode Power MOSFET

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SSD50N08-14D 数据手册

SSD50N08-14D

55A, 80V, R_DS(ON)11mΩ

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

TO-252(D-Pack)

DESCRIPTION

These miniature surface mount MOSFETs utilize a high

cell density trench process to provide low R_DS(on)and to

ensure minimal power loss and heat dissipation.

FEATURES

ꢀ

Low R_DS(on)provides higher efficiency and extends

battery life

ꢀ

Low thermal impedance copper leadframe TO-252

saves board space

ꢀ

Fast switching speed

High performance trench technology

G E

H F

APPLICATION

DC-DC converters and power management in portable

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

Millimeter

REF.

Min.

Max.

Min.

Max.

6.4

5.20

2.20

0.45

6.8

2.40

5.40

0.8

6.8

5.50

2.40

0.58

7.3

3.0

6.2

1.20

2.30 REF.

0.70

0.50

0.9

0.90

1.1

1.6

PACKAGE INFORMATION

0.43

0.15

0.58

Package

MPQ

Leader Size

TO-252

2.5K

13’ inch

Drain

Gate

Source

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

Continuous Drain Current ¹

Pulsed Drain Current ²

T_A=25℃

I_D

I_DM

200

Continuous Source Current (Diode Conduction) ¹

I_S

Power Dissipation ¹

T_A=25℃

P_D

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 175

Thermal Resistance Ratings

Maximum Thermal Resistance Junction-Ambient ¹

R_θJA

R_θJC

°C / W

Maximum Thermal Resistance Junction-Case

3.0

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-Jan-2014 Rev. A

Page 1 of 4

12 3 4

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