Datasheet > SSD50N06-15D

SSD50N06-15D

更新时间： 2024-11-13 09:05:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	381K
描述
N-Ch Enhancement Mode Power MOSFET

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SSD50N06-15D 数据手册

SSD50N06-15D

N-Ch Enhancement Mode Power MOSFET

51A, 60V, R_DS(ON)13 mΩ

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-252(D-Pack)

DESCRIPTION

These miniature surface mount MOSFETs utilize high cell density

process. Low R_DS(on)assures minimal power loss and conserves energy,

making this device ideal for use in power management circuitry. Typical

applications are PWM DC-DC converters, power management in portable

and battery-powered products such as computers, printers, battery charger,

telecommunication power system, and telephones power system.

FEATURES



Low R_DS(on)Provides Higher Efficiency and Extends Battery Life

Miniature TO-252 Surface Mount Package Saves Board Space

High power and current handling capability

G E

Low side high current DC-DC Converter applications

H F

PRODUCT SUMMARY

I_D(A)

V_DS(V)

R_DS(on) m(

13 @V_GS= 10V

18 @V_GS= 4.5V

Millimeter

REF.

Min.

Max.

Min.

Max.

6.4

5.20

2.20

0.45

6.8

5.50

2.40

0.58

7.3

2.30 REF.

0.70

0.50

0.9

0.90

1.1

1.6

0.43

0.15

0.58

2.40

5.40

0.8

3.0

6.2

1.20



Drain



Gate



Source

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

V_DS

±20

Gate-Source Voltage

V_GS

Continuous Drain Current ^a

Pulsed Drain Current ^b

I_D@T_C=25℃

I_DM

Continuous Source Current (Diode Conduction) ^a

Power Dissipation ^a

I_S

P_D@T_C=25℃

T_J, T_STG

°C

Operating Junction and Storage Temperature Range

-55 ~ 175

THERMAL RESISTANCE RATINGS

Maximum Thermal Resistance Junction-Ambient ^a

R_θJA

R_θJC

°C / W

Maximum Thermal Resistance Junction-Case

3.0

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

27-Sep-2010 Rev. B

Page 1 of 4

12 3 4

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