SSD50N06-15D
N-Ch Enhancement Mode Power MOSFET
51A, 60V, RDS(ON) 13 mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-252(D-Pack)
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density
process. Low RDS(on) assures minimal power loss and conserves energy,
making this device ideal for use in power management circuitry. Typical
applications are PWM DC-DC converters, power management in portable
and battery-powered products such as computers, printers, battery charger,
telecommunication power system, and telephones power system.
A
B
C
D
FEATURES
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TO-252 Surface Mount Package Saves Board Space
High power and current handling capability
G E
Low side high current DC-DC Converter applications
K
H F
N
O
P
PRODUCT SUMMARY
M
J
PRODUCT SUMMARY
ID(A)
51
VDS(V)
60
RDS(on) m(
13 @VGS= 10V
18 @VGS= 4.5V
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
6.4
5.20
2.20
0.45
6.8
6.8
5.50
2.40
0.58
7.3
J
K
M
N
O
P
2.30 REF.
0.70
0.50
0.9
0.90
1.1
1.6
44
0
0.43
0.15
0.58
2.40
5.40
0.8
3.0
6.2
1.20
G
H
Drain
Gate
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
Drain-Source Voltage
VDS
60
±20
Gate-Source Voltage
VGS
V
Continuous Drain Current a
Pulsed Drain Current b
ID @TC=25℃
IDM
51
A
40
A
Continuous Source Current (Diode Conduction) a
Power Dissipation a
IS
30
A
PD @TC=25℃
TJ, TSTG
50
W
°C
Operating Junction and Storage Temperature Range
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
RθJC
50
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
3.0
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Sep-2010 Rev. B
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