Datasheet > SSD408

SSD408

更新时间： 2024-09-25 06:14:19

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	430K
描述
N-Channel Enhancement Mode Power Mos.FET

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SSD408 数据手册

SSD408

18A, 30V,RDS(ON)18m

Elektronische Bauelemente

N-Channel Enhancement Mode PowerMos.FET

RoHS Compliant Product

Description

TO-252

The SSD408 uses advanced trench technology to provide

excellent on-resistance and low gate charge.

The TO-252 package is universally preferred for all commercial-industrial

surface mount applications and suited for use as a load switch or in

PWM applications.

Features

* Simple Drive Requirement

* Lower On-resistance

* Fast Switching Characteristic

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

2.80

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.20

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@TC=25к

I_D@TC=100к

I_DM

Total Power Dissipation

P_D@TC=25к

0.4

Linear Derating Factor

W/к

Single Pulse Avalanche Energy²

Single Pulse Avalanche Current

Operating Junction and Storage Temperature Range

E_AS

I_AS

Tj, Tstg

-55 ~ +175

Thermal Data

Parameter

Symbol

Rthj-c

Value

2.5

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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