Datasheet > SSD40P04_11

SSD40P04_11

更新时间： 2024-09-25 09:05:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	1558K
描述
-36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET

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SSD40P04_11 数据手册

SSD40P04-20DE

-36A , -40V , R_DS(ON)30m

Ω

P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

TO-252(D-Pack)

DESCRIPTION

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low R_DS(on)

and to ensure minimal power loss and heat dissipation.

FEATURES

ꢀ

Low R_DS(on)provides higher efficiency and

extends battery life.

ꢀ

Low thermal impedance copper leadframe

TO-252 saves board space.

G E

ꢀ

Fast Switch Speed.

High performance trench technology.

H F

APPLICATION

DC-DC converters and power management in portable

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

Millimeter

REF.

Min.

Max.

Min.

Max.

6.35

5.20

2.15

0.45

6.8

6.80

5.50

2.40

0.58

7.5

2.30 REF.

0.64

0.50

0.9

0.43

0.90

1.1

1.65

0.15

0.58

PACKAGE INFORMATION

2.40

5.40

0.64

3.0

6.25

1.20

Package

MPQ

Leader Size

Drain

TO-252

2.5K

13 inch

Gate

Source

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

-40

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current ¹

I_D

I_DM

-36

-40

Pulsed Drain Current @T_A=25°C

Continuous Source Current (Diode Conduction) ¹

I_S

-30

Total Power Dissipation @T_A=25°C

P_D

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 175

Thermal Resistance Ratings

Maximum Thermal Resistance Junction-Ambient ¹

R_θJA

R_θJC

°C / W

Maximum Thermal Resistance Junction-Case

Notes：

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

2-Dec-2011 Rev. A

Page 1 of 4

12 3 4

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