Datasheet > SSD40N10-30D

SSD40N10-30D

更新时间： 2024-09-25 09:05:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	766K
描述
N-Ch Enhancement Mode Power MOSFET

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技术参数
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SSD40N10-30D 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.71	Base Number Matches：	1

SSD40N10-30D 数据手册

SSD40N10-30D

26A, 100V, R_DS(ON)36mΩ

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

FEATURES

TO-252(D-Pack)

ꢀ

Low R_DS(on)trench technology.

Low thermal impedance.

Fast switching speed.

APPLICATION

ꢀ

PoE Power Sourcing Equipment.

PoE Powered Devices.

Telecom DC/DC converters.

White LED boost converters.

G E

H F

PACKAGE INFORMATION

Package

MPQ

Leader Size

13’ inch

Millimeter

REF.

TO-252

2.5K

Min.

Max.

Min.

Max.

6.4

5.20

2.20

0.45

6.8

2.40

5.40

0.8

6.8

5.50

2.40

0.58

7.3

3.0

6.2

1.20

2.30 REF.

0.70

0.50

0.9

0.90

1.1

1.6

0.43

0.15

0.58

Drain

Gate

Source

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

100

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

Continuous Drain Current @T_C=25℃¹

Pulsed Drain Current ²

I_D

I_DM

Continuous Source Current (Diode Conduction) ¹

Total Power Dissipation @T_C=25℃¹

I_S

P_D

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 175

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient ¹

R_θJA

R_θJC

°C / W

Maximum Thermal Resistance Junction-Case

3.0

Notes：

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

04-May-2011 Rev.A

Page 1 of 4

12 3 4

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