SSD40N04-20D
N-Ch Enhancement Mode Power MOSFET
39A, 40V, RDS(ON) 22mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
TO-252(D-Pack)
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density process.
Low RDS(on) assures minimal power loss and conserves energy, making this
device ideal for use in power management circuitry. Typical applications are
PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
A
B
C
D
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
G E
K
J
H F
N
O
P
Low side high current DC-DC Converter applications.
M
PRODUCT SUMMARY
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
6.4
5.20
2.20
0.45
6.8
2.40
5.40
0.8
6.8
5.50
2.40
0.58
7.3
3.0
6.2
1.20
J
K
M
N
O
P
2.30 REF.
PRODUCT SUMMARY
0.70
0.50
0.9
0.90
1.1
1.6
VDS(V)
40
RDS(on) m(
22@VGS= 10V
27@VGS= 4.5V
ID(A)
39
36
0
0.43
0.15
0.58
G
H
Drain
Gate
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VDS
RATINGS
UNIT
Drain-Source Voltage
40
±20
V
V
Gate-Source Voltage
VGS
Continuous Drain Current a
Pulsed Drain Current b
ID @TA=25℃
IDM
39
A
40
A
Continuous Source Current (Diode Conduction) a
Total Power Dissipation a
IS
30
A
PD @TA=25℃
TJ, TSTG
50
W
°C
Operating Junction and Storage Temperature Range
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
RθJC
50
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
3.0
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Sep-2010 Rev.C
Page 1 of 4