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SS2P4E3

更新时间： 2024-09-15 15:52:51
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 58K
描述
Rectifier Diode, Schottky, 1 Element, 2A, 40V V(RRM),

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SS2P4E3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.84
配置：SINGLE二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.5 V最大非重复峰值正向电流：55 A
元件数量：1最高工作温度：150 °C
最大输出电流：2 A最大重复峰值反向电压：40 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKYBase Number Matches：1

SS2P4E3 数据手册

 浏览型号SS2P4E3的Datasheet PDF文件第2页 
SS2P2 thru SS2P4  
Vishay Semiconductors  
New Product  
formerly General Semiconductor  
Surface Mount Schottky Barrier Rectifiers  
Reverse Voltage 20 to 40 V  
Forward Current 2.0 A  
Case Style SMP  
Features  
Cathode band  
• Very low profile - typical height of 1.0mm  
• Low VF, low power loss, high efficiency  
• Low thermal resistance with direct thermal path of die  
on exposed cathode heat sink  
0.086 (2.18)  
0.074 (1.88)  
• For use in low voltage high frequency inverters, free  
wheeling, and polarity protection application  
• Guarding for overvoltage protection  
0.142 (3.61)  
0.126 (3.19)  
• High temperature soldering:  
260°C maximum/10 seconds at terminals  
0.158 (4.00)  
0.146 (3.70)  
Mechanical Data  
Case: SMP  
Terminals: Matte Tin plated (E3 Suffix),  
solderable per MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Weight: 0.0009 oz., 0.024 g  
0.013 (0.35)  
0.004 (0.10)  
0.045 (1.15)  
0.033 (0.85)  
0.012 (0.30)  
0.000 (0.00)  
Epoxy meets UL 94V-0 flammability rating  
0.018 (0.45)  
0.006 (0.15)  
Mounting Pad Layout  
Dimensions in inches  
and (millimeters)  
0.030  
(0.762)  
0.012 (0.30) REF  
0.105  
(2.67)  
0.025  
(0.635)  
0.053 (1.35)  
0.041 (1.05)  
0.036 (0.91)  
0.024 (0.61)  
0.050  
(1.27)  
0.100  
(2.54)  
0.032 (0.80)  
0.016 (0.40)  
0.103 (2.60)  
0.087 (2.20)  
Maximum Ratings & Thermal Characteristics (TA = 25°C unless otherwise noted.)  
Parameter  
Symbol  
SS2P2  
22  
SS2P3  
23  
SS2P4  
Unit  
Device marking code  
24  
40  
28  
40  
Maximum repetitive peak reverse voltage  
RMS reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
20  
14  
20  
30  
21  
30  
V
V
V
A
Maximum average forward rectified current Fig.1  
IF(AV)  
2.0  
Peak forward surge current 10ms single half sine-wave  
IFSM  
55  
A
superimposed on rated load  
Non-repetitive avalanche energy  
at IAS = 1.5A, L = 10mH, TJ = 25°C  
EAS  
11.25  
mJ  
Voltage rate of change (rated VR)  
dv/dt  
10,000  
V/us  
RθJA  
RθJL  
RθJC  
115  
Typical thermal resistance (1)  
°C/W  
15  
20  
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
°C  
Electrical Characteristics (TA = 25°C unless otherwise noted.)  
Parameter  
Symbol  
Typ.  
Max.  
Maximum instantaneous forward voltage(2) at IF=2A, TJ=25°C  
0.50  
0.55  
VF  
IR  
V
at IF=2A, TJ=125°C  
0.43  
0.50  
Maximum reverse current  
at rated VR(2)  
TJ = 25°C  
TJ =125°C  
-
150  
15  
µA  
8
mA  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
110  
pF  
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the ter-  
minal of cathode band. RθJC is measured at the top centre of the body  
(2) Pulse test: 300µs pulse width, 1% duty cycle  
Document Number 88910  
04-Aug-04  
www.vishay.com  
1
12

中文翻译

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