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SS2P5HM384A PDF预览

SS2P5HM384A

更新时间: 2024-09-16 12:49:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 84K
描述
High Current Density Surface Mount Schottky Barrier Rectifiers

SS2P5HM384A 数据手册

 浏览型号SS2P5HM384A的Datasheet PDF文件第2页浏览型号SS2P5HM384A的Datasheet PDF文件第3页浏览型号SS2P5HM384A的Datasheet PDF文件第4页 
New Product  
SS2P5, SS2P6  
Vishay General Semiconductor  
High Current Density Surface Mount Schottky Barrier Rectifiers  
FEATURES  
• Very low profile - typical height of 1.1 mm  
eSMP® Series  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• AEC-Q101 qualified  
DO-220AA (SMP)  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21 definition  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
VRRM  
IFSM  
2.0 A  
50 V, 60 V  
50 A  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
commercial grade  
Base P/NHM3 - halogen-free, RoHS compliant, and  
automotive grade  
EAS  
11.25 mJ  
0.54 V  
VF  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
150 °C  
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters and polarity protection  
applications.  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS2P5  
25  
SS2P6  
26  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
50  
60  
V
A
2.0  
50  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C  
Voltage rate of change (rated VR)  
EAS  
11.25  
10 000  
mJ  
V/μs  
°C  
dV/dt  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Document Number: 88943  
Revision: 19-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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