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SS2P6-HE3/85A PDF预览

SS2P6-HE3/85A

更新时间: 2024-11-09 15:52:51
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 88K
描述
2A, 60V, SILICON, RECTIFIER DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN

SS2P6-HE3/85A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-220AA包装说明:ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
针数:2Reach Compliance Code:unknown
风险等级:5.72其他特性:FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-220AAJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:60 V表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SS2P6-HE3/85A 数据手册

 浏览型号SS2P6-HE3/85A的Datasheet PDF文件第2页浏览型号SS2P6-HE3/85A的Datasheet PDF文件第3页浏览型号SS2P6-HE3/85A的Datasheet PDF文件第4页 
SS2P5 & SS2P6  
Vishay General Semiconductor  
New Product  
High-Current Density Surface Mount Schottky Rectifier  
FEATURES  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 260 °C  
• Component in accordance to RoHS 2002/95/EC  
DO-220AA (SMP)  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters, free-  
wheeling, dc-to-dc converters and polarity protection  
applications.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
2 A  
50 V, 60 V  
50 A  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
EAS  
11.25 mJ  
0.54 V  
VF  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Tj max.  
150 °C  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SS2P5  
25  
SS2P6  
26  
UNIT  
Device marking code  
Maximum repetive peak reverse voltage  
Maximum average forward rectified current (see Fig. 1)  
VRRM  
IF(AV)  
50  
60  
V
A
2.0  
50  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Non-repetitive avalanche energy  
at IAS = 1.5 A, L = 10 mH, Tj = 25 °C  
EAS  
11.25  
mJ  
Voltage rate of change (rated VR)  
dv/dt  
10000  
V/us  
°C  
Operating junction and storage temperature range  
T
J, TSTG  
- 55 to + 150  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP  
MAX.  
UNIT  
at IF = 2 A, Tj = 25 °C  
at IF = 2 A, Tj = 125 °C  
0.62  
0.54  
0.70  
0.60  
Maximum instantaneous forward voltage (1)  
VF  
V
Tj = 25 °C  
Tj = 125 °C  
-
100  
10  
µA  
mA  
(1)  
Maximum reverse current at rated VR  
IR  
1.6  
Typical junction capacitance  
at 4.0 V, 1 MHz  
CJ  
80  
pF  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number 88943  
23-Jun-06  
www.vishay.com  
1

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