Datasheet > SS2P4HE385A

SS2P4HE385A

更新时间： 2024-11-07 01:08:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	104K
描述
High Current Density Surface Mount Schottky Barrier Rectifiers

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数据手册

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SS2P4HE385A 数据手册

New Product

SS2P2, SS2P3 & SS2P4

Vishay General Semiconductor

High Current Density Surface Mount

Schottky Barrier Rectifiers

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

eSMP^TMSeries

• Low forward voltage drop, low power

losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

DO-220AA (SMP)

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheelling, dc-to-dc converters, and polarity

protection applications.

PRIMARY CHARACTERISTICS

I_F(AV)

2 A

20 V, 30 V, 40 V

50 A

MECHANICAL DATA

Case: DO-220AA (SMP)

V_RRM

I_FSM

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

E_AS

11.25 mJ

0.50 V

V_F

T_Jmax.

150 °C

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS2P2

SS2P3

SS2P4

UNIT

Device marking code

Maximum repetive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

I_F(AV)

2.0

Peak forward surge current 10 ms single half sine-wave superimposed

on rated load

I_FSM

Non-repetitive avalanche energy at I_AS= 1.5 A, L = 10 mH, T_J= 25 °C

Voltage rate of change (rated V_R)

E_AS

dV/dt

11.25

10 000

V/µs

°C

Operating junction and storage temperature range

T_J,T_STG

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

I_F= 2 A

T_J= 25 °C

T_J= 125 °C

0.50

0.43

0.55

0.50

Maximum instantaneous forward voltage ⁽¹⁾

V_F

T_J= 25 °C

T_J= 125 °C

150

µA

(2)

Maximum reverse current at rated V_R

I_R

Typical junction capacitance

4.0 V, 1 MHz

C_J

110

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≤ 40 ms

Document Number: 88910

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与SS2P4HE385A相关器件

型号	品牌	获取价格	描述	数据表
SS2P4HM3/84A	VISHAY	获取价格	DIODE 2 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN,
SS2P4HM3-84A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS2P4HM3-85A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS2P4-M3/84A	VISHAY	获取价格	DIODE 2 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN,
SS2P4-M3-84A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS2P4-M3-85A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS2P5	VISHAY	获取价格	High-Current Density Surface Mount Schottky Rectifier
SS2P5_08	VISHAY	获取价格	High-Current Density Surface Mount Schottky Rectifier
SS2P5_11	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS2P5_15	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers

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