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SS2P4-M3-84A PDF预览

SS2P4-M3-84A

更新时间: 2024-11-06 09:06:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 86K
描述
High Current Density Surface Mount Schottky Barrier Rectifiers

SS2P4-M3-84A 数据手册

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New Product  
SS2P2, SS2P3, SS2P4  
Vishay General Semiconductor  
High Current Density Surface Mount Schottky Barrier Rectifiers  
FEATURES  
• Very low profile - typical height of 1.0 mm  
eSMP® Series  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
• Low thermal resistance  
• Meets MSL level 1 per J-STD-020, LF maximum  
peak of 260 °C  
• AEC-Q101 qualified  
DO-220AA (SMP)  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21 definition  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.0 A  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
Molding compound meets UL 94 V-0 flammability rating  
VRRM  
IFSM  
20 V, 30 V, 40 V  
50 A  
Base P/N-M3  
commercial grade  
Base P/NHM3 - halogen-free, RoHS compliant, and  
automotive grade  
- halogen-free, RoHS compliant, and  
EAS  
11.25 mJ  
0.50 V  
VF  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TYPICAL APPLICATIONS  
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters and polarity protection  
applications.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS2P2  
22  
SS2P3  
23  
SS2P4  
24  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
20  
30  
40  
V
A
2.0  
Peak forward surge current 10 ms single  
half sine-wave superimposed on rated load  
IFSM  
50  
A
Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C  
Voltage rate of change (rated VR)  
EAS  
11.25  
10 000  
mJ  
V/μs  
°C  
dV/dt  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Document Number: 88910  
Revision: 19-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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