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SQ3418EV PDF预览

SQ3418EV

更新时间: 2024-11-17 01:09:23
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威世 - VISHAY /
页数 文件大小 规格书
12页 258K
描述
Automotive N-Channel 60 V (D-S) 175 °C MOSFET

SQ3418EV 数据手册

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SQ3426EV  
Vishay Siliconix  
www.vishay.com  
Automotive N-Channel 60 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® power MOSFET  
PRODUCT SUMMARY  
VDS (V)  
60  
0.042  
0.063  
7
• AEC-Q101 qualified  
R
DS(on) (Ω) at VGS = 10 V  
DS(on) (Ω) at VGS = 4.5 V  
• 100 % Rg and UIS tested  
R
• Material categorization:  
ID (A)  
for definitions of compliance please see  
www.vishay.com/doc?99912  
Configuration  
Single  
TSOP-6 Single  
(1, 2, 5, 6) D  
S
4
D
5
D
6
(3) G  
3
G
2
D
(4) S  
1
D
N-Channel MOSFET  
Top View  
Marking Code: 8Q  
ORDERING INFORMATION  
Package  
TSOP-6  
Lead (Pb)-free and Halogen-free  
SQ3426EV-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
60  
V
VGS  
20  
T
C = 25 °C  
7
Continuous Drain Current  
ID  
TC = 125 °C  
4
Continuous Source Current (Diode Conduction)  
Pulsed Drain Current a  
IS  
6
A
IDM  
IAS  
EAS  
29  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
10  
L = 0.1 mH  
5
mJ  
W
TC = 25 °C  
5
1.6  
Maximum Power Dissipation a  
PD  
TC = 125 °C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to +175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
110  
30  
UNIT  
Junction-to-Ambient  
PCB Mount b  
°C/W  
Junction-to-Foot (Drain)  
RthJF  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %.  
b. When mounted on 1" square PCB (FR4 material).  
S15-2119-Rev. B, 07-Sep-15  
Document Number: 65107  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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