Datasheet > SQ3426AEEV

SQ3426AEEV

更新时间： 2024-09-29 01:06:27

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威世 - VISHAY		/
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描述
Automotive P-Channel 60 V (D-S) 175 Â°C MOSFET

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SQ3426AEEV 数据手册

SQ3427AEEV

Vishay Siliconix

www.vishay.com

Automotive P-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

• AEC-Q101 qualified ^c

PRODUCT SUMMARY

V_DS(V)

-60

0.095

0.135

-5.3

_DS(on)() at V_GS= -10 V

_DS(on)() at V_GS= -4.5 V

• 100 % R_gand UIS tested

• Typical ESD protection 800 V

I_D(A)

Configuration

Package

Single

TSOP-6

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

(1, 2, 5, 6) D

TSOP-6 Single



(3) G

(4) S

P-Channel MOSFET

Top View

Marking Code: 8Y

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

-60

V_GS

_C= 25 °C

-5.3

Continuous Drain Current

I_D

_C= 125 °C

-3

Continuous Source Current (Diode Conduction)

Pulsed Drain Current ^a

I_S

-6.3

I_DM

I_AS

-21

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

-21

L = 0.1 mH

E_AS

T_C= 25 °C

1.6

Maximum Power Dissipation ^a

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction-to-Ambient

PCB Mount ^b

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR4 material).

c. Parametric verification ongoing.

S15-1676-Rev. A, 16-Jul-15

Document Number: 65333

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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