Datasheet > SQ3426CEEV

SQ3426CEEV

更新时间： 2024-09-29 14:55:59

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描述
Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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SQ3426CEEV 数据手册

SQ3426CEEV

Vishay Siliconix

www.vishay.com

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

TSOP-6 Single

• TrenchFET^®power MOSFET

• Typical ESD protection 800 V HBM

• AEC-Q101 qualified

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

(1, 2, 5, 6) D

Top View

PRODUCT SUMMARY

(3) G

V_DS(V)

0.042

0.063

_DS(on)() at V_GS= 10 V

_DS(on)() at V_GS= 4.5 V

I_D(A)

(4) S

Configuration

Single

N-Channel MOSFET

Marking Code: 9IXXX

ORDERING INFORMATION

Package

TSOP-6

SQ3426CEEV

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

Continuous drain current

I_D

T_C= 125 °C

Continuous source current (diode conduction)

Pulsed drain current ^a

I_S

4.6

I_DM

I_AS

Single pulse avalanche current

Single pulse avalanche energy

L = 0.1 mH

E_AS

T_C= 25 °C

1.6

Maximum power dissipation

P_D

T_C= 125 °C

Operating junction and storage temperature range

T_J, T_stg

- 55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction-to-ambient

PCB mount ^b

°C/W

Junction-to-foot (drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %

b. When mounted on 1" square PCB (FR4 material)

S22-1007-Rev. A, 05-Dec-2022

Document Number: 62147

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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