Datasheet > SPP02N60S5_09

SPP02N60S5_09

更新时间： 2024-11-15 06:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	352K
描述
Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

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SPP02N60S5_09 数据手册

SPP02N60S5

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

600

1.8

Ω

DS(on)

• Ultra low gate charge

PG-TO220

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO220-3-1

Type

Package

Ordering Code

Marking

02N60S5

SPP02N60S5

PG-TO220

Q67040-S4181

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

1.8

1.1

3.2

T = 100 °C

Pulsed drain current, t limited by T

Avalanche energy, single pulse

jmax

D puls

I = 1.35 A, V = 50 V

jmax

0.07

1.8

Avalanche energy, repetitive t limited by T

I = 1.8 A, V = 50 V

Avalanche current, repetitive t limited by T

jmax AR

Gate source voltage

±20

Gate source voltage AC (f >1Hz)

tot

Power dissipation, T = 25°C

°C

Operating and storage temperature

T , T

-55... +150

stg

Page 1

Rev. 2.7

2009-11-26

12 3 4 5 6 7...10

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