Datasheet > SPP03N60C3_09

SPP03N60C3_09

更新时间： 2024-11-15 09:08:55

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极
页数	文件大小	规格书
14页	594K
描述
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

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中文翻译

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数据手册

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SPP03N60C3_09 数据手册

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Gate source voltage static

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Power dissipation, T = 25°C

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Reverse diode dv/dt

dv/dt

V/ns

Rev. 3.1

PDJHꢀꢁ

2009-11-26

12 3 4 5 6 7...14

中文翻译

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