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SPP03N60S5_03 PDF预览

SPP03N60S5_03

更新时间: 2024-11-15 03:31:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
10页 251K
描述
Cool MOS™ Power Transistor

SPP03N60S5_03 数据手册

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SPP03N60S5  
SPB03N60S5  
Final data  
Cool MOS™ Power Transistor  
V
600  
1.4  
3.2  
V
A
DS  
Feature  
R
DS(on)  
I
New revolutionary high voltage technology  
Ultra low gate charge  
Periodic avalanche rated  
D
P-TO263-3-2  
P-TO220-3-1  
Extreme dv/dt rated  
Ultra low effective capacitances  
Improved transconductance  
Type  
Package  
Ordering Code  
Marking  
SPP03N60S5  
P-TO220-3-1 Q67040-S4184  
03N60S5  
SPB03N60S5  
P-TO263-3-2 Q67040-S4197  
03N60S5  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
3.2  
2
C
T = 100 °C  
C
5.7  
100  
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
E
p
jmax  
D puls  
mJ  
AS  
I = 2.4 A, V = 50 V  
Avalanche energy, repetitive t limited by T  
D
DD  
1)  
jmax  
E
0.2  
3.2  
AR  
AR  
I = 3.2 A, V = 50 V  
D
DD  
A
V
Avalanche current, repetitive t limited by T  
Gate source voltage  
I
AR  
jmax AR  
V
±20  
±30  
38  
GS  
V
P
Gate source voltage AC (f >1Hz)  
GS  
tot  
W
°C  
Power dissipation, T = 25°C  
C
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Page 1  
2003-10-06  

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