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SPP02N80C3XKSA1 PDF预览

SPP02N80C3XKSA1

更新时间: 2024-09-29 15:52:39
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网高压开关脉冲晶体管
页数 文件大小 规格书
10页 446K
描述
Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN

SPP02N80C3XKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.77其他特性:AVALANCHE RATED, HIGH VOLTAGE
雪崩能效等级(Eas):90 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (ID):2 A
最大漏源导通电阻:2.7 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):6 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SPP02N80C3XKSA1 数据手册

 浏览型号SPP02N80C3XKSA1的Datasheet PDF文件第2页浏览型号SPP02N80C3XKSA1的Datasheet PDF文件第3页浏览型号SPP02N80C3XKSA1的Datasheet PDF文件第4页浏览型号SPP02N80C3XKSA1的Datasheet PDF文件第5页浏览型号SPP02N80C3XKSA1的Datasheet PDF文件第6页浏览型号SPP02N80C3XKSA1的Datasheet PDF文件第7页 
SPP02N80C3  
CoolMOSTM Power Transistor  
Features  
Product Summary  
V DS  
800  
2.7  
12  
V
• New revolutionary high voltage technology  
• Extreme dv/dt rated  
R DS(on)max @ Tj = 25°C  
Q g,typ  
W
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
PG-TO220-3  
• Ultra low effective capacitances  
CoolMOSTM 800V designed for:  
• Industrial application with high DC bulk voltage  
• Switching Application ( i.e. active clamp forward )  
Type  
Package  
Marking  
SPP02N80C3  
PG-TO220-3  
02N80C3  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
2
1.2  
Continuous drain current  
A
Pulsed drain current2)  
6
I D,pulse  
E AS  
I D=1 A, V DD=50 V  
I D=2 A, V DD=50 V  
Avalanche energy, single pulse  
90  
mJ  
2),3)  
2),3)  
E AR  
0.05  
2
Avalanche energy, repetitive t AR  
I AR  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V DS=0…640 V  
static  
50  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
42  
AC (f >1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T j, T stg  
-55 ... 150  
60  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 2.91  
2011-09-28  

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