Datasheet > SPP02V30S

SPP02V30S

更新时间： 2024-11-16 14:51:39

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	154K
描述
肖特基整流管

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中文翻译

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SPP02V30S 数据手册

SPP02V30S

Surface Mount Schottky Barrier Rectifier

PINNING

DESCRIPTION

Cathode

Features

Anode

• Low forward voltage

• Low reverse current

Transparent top view

Simplified outline DFN1608-2C and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

Value

Unit

Repetitive Peak Reverse Voltage

Average Rectified Forward Current

I_F(AV)

Peak Forward Surge Current 8.3 ms Single half sine-

wave Superimposed on Rated Load (JEDEC Method)

I_FSM

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 65 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

210 ¹⁾

Thermal Resistance from Junction to Ambient

℃/W

80 ²⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

Electrical Characteristics (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

V_(BR)R

at I_R= 150 µA

Forward Voltage

at I_F= 0.1 A

at I_F= 1 A

0.32

0.43

0.53

V_F

at I_F=2 A

DC Reverse Current

at V_R= 10 V

at V_R= 30 V

I_R

150

µA

Junction Capacitance

at V_R= 0 V, f = 1 MHz

C_J

500

1 / 3

Dated: 07/09/2023 Rev : 02

12 3

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