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SPB10N10 PDF预览

SPB10N10

更新时间: 2024-11-15 22:07:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 486K
描述
SIPMOS Power-Transistor

SPB10N10 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.87
其他特性:AVALANCHE RATED雪崩能效等级(Eas):60 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):10.3 A最大漏极电流 (ID):10.3 A
最大漏源导通电阻:0.17 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):220
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):41.2 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SPB10N10 数据手册

 浏览型号SPB10N10的Datasheet PDF文件第2页浏览型号SPB10N10的Datasheet PDF文件第3页浏览型号SPB10N10的Datasheet PDF文件第4页浏览型号SPB10N10的Datasheet PDF文件第5页浏览型号SPB10N10的Datasheet PDF文件第6页浏览型号SPB10N10的Datasheet PDF文件第7页 
Preliminary data  
SPI10N10  
SPP10N10,SPB10N10  
SIPMOS Power-Transistor  
Product Summary  
Feature  
V
100  
170  
10.3  
V
m
A
DS  
N-Channel  
R
DS(on)  
Enhancement mode  
175°C operating temperature  
Avalanche rated  
dv/dt rated  
I
D
P-TO262-3-1  
P-TO263-3-2  
P-TO220-3-1  
Type  
SPP10N10  
Package  
Ordering Code  
Marking  
10N10  
10N10  
10N10  
P-TO220-3-1 Q67042-S4118  
P-TO263-3-2 Q67042-S4119  
P-TO262-3-1 Q67042-S4120  
SPB10N10  
SPI10N10  
Maximum Ratings,at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
10.3  
7.8  
C
T =100°C  
C
41.2  
60  
6
Pulsed drain current  
I
D puls  
T =25°C  
C
mJ  
Avalanche energy, single pulse  
E
AS  
I =10.3 A , V =25V, R =25  
D
DD  
GS  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I =10.3A, V =80V, di/dt=200A/µs, T =175°C  
jmax  
S
DS  
Gate source voltage  
Power dissipation  
V
V
W
±20  
50  
GS  
P
tot  
T =25°C  
C
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55... +175  
55/175/56  
j
stg  
Page 1  
2002-01-31  

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