Datasheet > SPB11N60C3_07

SPB11N60C3_07

更新时间： 2024-11-16 09:09:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
13页	466K
描述
Cool MOS Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SPB11N60C3_07 数据手册

SPB11N60C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

@ T

650

0.38

Ω

jmax

DS(on)

PG-TO263

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

Type

SPB11N60C3

Package

PG-TO263

Ordering Code

Q67040-S4396

Marking

11N60C3

Maximum Ratings

Parameter

Symbol

Value

Unit

SPB

Continuous drain current

T = 25 °C

T = 100 °C

Pulsed drain current, t limited by T

D puls

jmax

Avalanche energy, single pulse

340

I =5.5A, V =50V

Avalanche energy, repetitive t limited by T

0.6

jmax

I =11A, V =50V

Avalanche current, repetitive t limited by T

Gate source voltage static

±20

jmax

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

125

Operating and storage temperature

Reverse diode dv/dt

dv/dt

-55...+150

°C

V/ns

stg

Rev. 2.6

Page 1

2007-12-14

12 3 4 5 6 7...13

中文翻译

下载PDF

与SPB11N60C3_07相关器件

型号	品牌	获取价格	描述	数据表
SPB11N60C3ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Met
SPB11N60C3XT	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Met
SPB11N60S5	INFINEON	获取价格	Cool MOS⑩ Power Transistor
SPB11N60S5_05	INFINEON	获取价格	New revolutionary high voltage technology Ultra low gate charge
SPB11N60S5-E6327	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Met
SPB1205	SUPERWORLD	获取价格	SMD POWER INDUCTORS
SPB1205100YZF	SUPERWORLD	获取价格	Length (mm): 12.50 \| Width (mm): 12.50 \| Height (mm): 6.00 \| SPQ (reel) : 600 Inductors wi
SPB1205100YZF-11	SUPERWORLD	获取价格	SMD POWER INDUCTORS
SPB1205100YZF-12	SUPERWORLD	获取价格	SMD POWER INDUCTORS
SPB1205100YZF-13	SUPERWORLD	获取价格	SMD POWER INDUCTORS