Datasheet > SPB11N60S5_05

SPB11N60S5_05

更新时间： 2024-09-28 06:13:11

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极
页数	文件大小	规格书
11页	355K
描述
New revolutionary high voltage technology Ultra low gate charge

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中文翻译

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数据手册

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SPB11N60S5_05 数据手册

SPB11N60S5

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

600

0.38

Ω

DS(on)

• Ultra low gate charge

PG-TO263

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type

Package

Ordering Code

Marking

11N60S5

SPB11N60S5

PG-TO263

Q67040-S4199

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

T = 100 °C

340

Pulsed drain current, t limited by T

Avalanche energy, single pulse

jmax

D puls

I = 5.5 A, V = 50 V

jmax

0.6

Avalanche energy, repetitive t limited by T

I = 11 A, V = 50 V

Avalanche current, repetitive t limited by T

jmax AR

Gate source voltage

±20

125

Gate source voltage AC (f >1Hz)

tot

Power dissipation, T = 25°C

°C

Operating and storage temperature

T , T

-55... +150

stg

Page 1

Rev. 2.3

2005-07-22

12 3 4 5 6 7...11

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