是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 7.89 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 340 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 11 A |
最大漏源导通电阻: | 0.38 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 33 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SPB11N60C3XT | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Met | |
SPB11N60S5 | INFINEON |
获取价格 |
Cool MOS⑩ Power Transistor | |
SPB11N60S5_05 | INFINEON |
获取价格 |
New revolutionary high voltage technology Ultra low gate charge | |
SPB11N60S5-E6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Met | |
SPB1205 | SUPERWORLD |
获取价格 |
SMD POWER INDUCTORS | |
SPB1205100YZF | SUPERWORLD |
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Length (mm): 12.50 | Width (mm): 12.50 | Height (mm): 6.00 | SPQ (reel) : 600 Inductors wi | |
SPB1205100YZF-11 | SUPERWORLD |
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SMD POWER INDUCTORS | |
SPB1205100YZF-12 | SUPERWORLD |
获取价格 |
SMD POWER INDUCTORS | |
SPB1205100YZF-13 | SUPERWORLD |
获取价格 |
SMD POWER INDUCTORS | |
SPB1205100YZF-14 | SUPERWORLD |
获取价格 |
SMD POWER INDUCTORS |