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SPB11N60C3 PDF预览

SPB11N60C3

更新时间: 2024-09-27 21:55:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
14页 195K
描述
Cool MOS Power Transistor

SPB11N60C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliant风险等级:7.31
其他特性:AVALANCHE RATED雪崩能效等级(Eas):340 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):11 A最大漏极电流 (ID):11 A
最大漏源导通电阻:0.38 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):33 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SPB11N60C3 数据手册

 浏览型号SPB11N60C3的Datasheet PDF文件第2页浏览型号SPB11N60C3的Datasheet PDF文件第3页浏览型号SPB11N60C3的Datasheet PDF文件第4页浏览型号SPB11N60C3的Datasheet PDF文件第5页浏览型号SPB11N60C3的Datasheet PDF文件第6页浏览型号SPB11N60C3的Datasheet PDF文件第7页 
SPP11N60C3, SPB11N60C3  
SPI11N60C3  
Preliminary data  
Cool MOS™=Power Transistor  
COOLMOS  
Power Semiconductors  
Feature  
Product Summary  
=New revolutionary high voltage technology  
V
@ T  
650  
0.38  
11  
V
A
DS  
jmax  
Worldwide best R  
in TO 220  
DS(on)  
R
DS(on)  
Ultra low gate charge  
=Periodic avalanche rated  
Extreme dv/dt rated  
I
D
P-TO262-3-1  
P-TO263-3-2  
P-TO220-3-1  
=High peak current capability  
=Improved transconductance  
=150 °C operating temperature  
Type  
Package  
Ordering Code  
Marking  
11N60C3  
11N60C3  
11N60C3  
SPP11N60C3  
SPB11N60C3  
SPI11N60C3  
P-TO220-3-1 Q67040-S4395  
P-TO263-3-2 Q67040-S4396  
P-TO262-3-1 Q67042-S4403  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
11  
7
C
T = 100 °C  
C
33  
340  
Pulsed drain current, t limited by T  
I
D puls  
p
jmax  
mJ  
Avalanche energy, single pulse  
E
AS  
I =5.5A, V =50V  
D
DD  
1)  
0.6  
Avalanche energy, repetitive t limited by T  
E
AR  
jmax  
AR  
I =11A, V =50V  
D
DD  
11  
6
A
Avalanche current, repetitive t limited by T  
I
AR  
AR  
jmax  
Reverse diode dv/dt  
dv/dt  
V/ns  
I =11A, V  
DS  
<=V , di/dt=100A/µs, T =150°C  
DD jmax  
S
V
Gate source voltage static  
V
V
P
±20  
±30  
125  
GS  
GS  
tot  
Gate source voltage dynamic  
W
Power dissipation, T = 25°C  
C
°C  
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Page 1  
2001-07-05  

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