5秒后页面跳转
SPB10N10L PDF预览

SPB10N10L

更新时间: 2024-11-16 04:03:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 240K
描述
SIPMOS Power-Transistor

SPB10N10L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:PLASTIC, TO-263, 3 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.85
其他特性:LOGIC LEVEL COMPATIBLE, AVALANCHE RATED雪崩能效等级(Eas):60 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):10.3 A最大漏极电流 (ID):10.3 A
最大漏源导通电阻:0.21 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):42.2 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

SPB10N10L 数据手册

 浏览型号SPB10N10L的Datasheet PDF文件第2页浏览型号SPB10N10L的Datasheet PDF文件第3页浏览型号SPB10N10L的Datasheet PDF文件第4页浏览型号SPB10N10L的Datasheet PDF文件第5页浏览型号SPB10N10L的Datasheet PDF文件第6页浏览型号SPB10N10L的Datasheet PDF文件第7页 
SPB10N10L  
SIPMOS Power-Transistor  
Product Summary  
Feature  
V
100  
154  
10.3  
V
m
A
DS  
N-Channel  
Enhancement mode  
Logic Level  
R
DS(on)  
I
D
P-TO263-3-2  
175°C operating temperature  
Avalanche rated  
dv/dt rated  
Type  
Package  
Ordering Code  
Marking  
SPB10N10L  
P-TO263-3-2  
Q67042-S4164  
10N10L  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
10.3  
8.1  
C
T =100°C  
C
42.2  
Pulsed drain current  
I
D puls  
T =25°C  
C
60  
6
mJ  
Avalanche energy, single pulse  
E
AS  
I =10.3 A , V =25V, R =25  
D
DD GS  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I =10.3A, V =80V, di/dt=200A/µs, T  
DS jmax  
=175°C  
S
Gate source voltage  
Power dissipation  
V
V
W
±20  
50  
GS  
P
tot  
T =25°C  
C
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55... +175  
55/175/56  
j
stg  
Page 1  
2005-02-14  

SPB10N10L 替代型号

型号 品牌 替代类型 描述 数据表
SPP10N10L INFINEON

完全替代

SIPMOS Power-Transistor
SPB10N10LG INFINEON

功能相似

Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, M

与SPB10N10L相关器件

型号 品牌 获取价格 描述 数据表
SPB10N10LG INFINEON

获取价格

Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, M
SPB11A152KA4 KYOCERA AVX

获取价格

Array/Network Capacitor, 100V, C0G, 0.0015uF, Through Hole Mount, SIP-4, SIP
SPB11A152KAC KYOCERA AVX

获取价格

Array/Network Capacitor, 100V, C0G, 0.0015uF, Through Hole Mount, SIP-12, SIP
SPB11A152KAD KYOCERA AVX

获取价格

Array/Network Capacitor, 100V, C0G, 0.0015uF, Through Hole Mount, SIP-13, SIP
SPB11C333MA2 KYOCERA AVX

获取价格

Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-2, SIP
SPB11C333MAD KYOCERA AVX

获取价格

Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-13, SIP
SPB11C333ZA2 KYOCERA AVX

获取价格

Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-2, SIP
SPB11E104MAC KYOCERA AVX

获取价格

Array/Network Capacitor, 100V, Z5U, 0.1uF, Through Hole Mount, SIP-12, SIP
SPB11E104MAE KYOCERA AVX

获取价格

Array/Network Capacitor, 100V, Z5U, 0.1uF, Through Hole Mount, SIP-14, SIP
SPB11E104PA2 KYOCERA AVX

获取价格

Array/Network Capacitor, 100V, Z5U, 0.1uF, Through Hole Mount, SIP-2, SIP