Datasheet > SP8K4FU6TB

SP8K4FU6TB

更新时间： 2024-09-30 14:36:03

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
4页	62K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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中文翻译

获取价格

技术参数
数据手册
替代型号

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SP8K4FU6TB 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.79
最大漏极电流 (Abs) (ID)：	9 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
湿度敏感等级：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

SP8K4FU6TB 数据手册

SP8K4

Transistors

Switching (30V, 9.0A)

SP8K4

zExternal dimensions (Unit : mm)

zFeatures

1) Low on-resistance.

SOP8

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (SOP8).

5.0±0.2

zApplication

Power switching, DC / DC converter.

0.2±0.1

0.4±0.1

zStructure

1.27

0.1

Silicon N-channel

MOS FET

Each lead has same dimensions

zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

It is the same ratings for the Tr. 1 and Tr. 2.

(8)

(7)

(6)

(5)

(8) (7) (6) (5)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

±9.0

±36

Continuous

Pulsed

Drain current

(1) (2) (3) (4)

I_DP

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

Source current

(Body diode)

Continuous

Pulsed

I_S

1.6

I_SP

6.4

Total power dissipation

Channel temperature

P_D

°C

(1)

(2)

(3)

(4)

Tch

Tstg

150

Storage temperature

1 Pw 10µs, Duty cycle 1%

−55 to +150

1 ESD PROTECTION DIODE

2 BODY DIODE

2 MOUNTED ON A CERAMIC BOARD.

A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

zThermal resistance (Ta=25°C)

Parameter

Symbol

Rth (ch-a)

Limits

62.5

Unit

Channel to ambient

°C / W

MOUNTED ON A CERAMIC BOARD.

1/3

12 3 4

中文翻译

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SP8K4FU6TB 替代型号

型号	品牌	替代类型	描述	数据表
SP8K4TB	ROHM	功能相似	Power Field-Effect Transistor, 9A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Meta

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