Datasheet > SP8K80

SP8K80

更新时间： 2024-09-30 09:10:07

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
7页	1174K
描述
10V Drive Nch MOSFET

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中文翻译

获取价格

数据手册

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SP8K80 数据手册

Data Sheet

10V Drive Nch MOSFET

SP8K80

 Structure

 Dimensions (Unit : mm)

SOP8

Silicon N-channel MOSFET

(8)

(7)

(6)

(5)

Features

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

1) Built-in G-S protection diode.

2) Small surface mount package(SOP8).

(1)

(2)

(3)

(4)

 Application

Switching

 Packaging specifications

 Inner circuit

(8)

(7)

(6)

(5)

Package

Taping

Type

Code

Basic ordering unit (pieces)

2500



SP8K80

∗2

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

∗1

(1)

(2)

(3)

(4)

1 ESD PROTECTION DIODE

2 BODY DIODE

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

Limits

Unit

V_DSS

V_GSS

I_D

500

Gate-source voltage

30

Continuous

Pulsed

0.5

Drain current

I_DP

2

Continuous

Pulsed

I_S

0.5

Source current

(Body Diode)

I_SP

0.25

Avalanche current

Avalanche energy

Power dissipation

Channel temperature

I_AS

E_AS

P_D

0.017

C

T_ch

T_stg

0.2

Range of storage temperature

55 to 150

*1 Pw10s, Duty cycle1%

*2 L 500H, V_DD=50V, R_G=25, T_ch=25°C

*3 Limited only by maximum channel temperature allowed.

*4 Mounted on a ceramic board.

www.rohm.com

2011.10 - Rev.A

1/6

12 3 4 5 6 7

中文翻译

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