Datasheet > SP8M51HZGTB

SP8M51HZGTB

更新时间： 2024-01-09 15:30:10

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
22页	2273K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SP8M51HZGTB 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.71	Base Number Matches：	1

SP8M51HZGTB 数据手册

SP8M51HZG

Datasheet

ꢀꢀ100V Nch+Pch Power MOSFET

ꢀꢀ

llOutline

ꢀ

Tr1:Nch Tr2:Pch

100V -100V

170mΩ 290mΩ

±3.0A ±2.5A

2.0W

Symbol

V_DSS

R_DS(on)(Max.)

SOP8

ꢀ

I_D

P_D

ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

llFeatures

1) Low on - resistance

llInner circuit

2) Small Surface Mount Package (SOP8)

3) Pb-free lead plating ; RoHS compliant

4) Halogen Free

5) Sn100% plating

6) AEC-Q101 Qualified

llPackaging specifications

Embossed

Tape

Packing

llApplication

Reel size (mm)

330

Switching

Tape width (mm)

Quantity (pcs)

Taping code

Marking

Type

2500

SP8M51

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Value

Tr1:Nch Tr2:Pch

Parameter

Drain - Source voltage

Symbol

Unit

V_DSS

I_D

100

±3.0

±12

±20

-100

±2.5

±10

±20

Continuous drain current

Pulsed drain current

I_DP

V_GSS

Gate - Source voltage

P_D

2.0

1.4

Power dissipation

total

P_D

T_j

Junction temperature

150

℃

T_stg

Operating junction and storage temperature range

-55 to +150

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www.rohm.com

ꢀ ꢀ

1/19

- Rev.001

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