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SP8M8FU6TB PDF预览

SP8M8FU6TB

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
6页 107K
描述
Transistor,

SP8M8FU6TB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Base Number Matches:1

SP8M8FU6TB 数据手册

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SP8M8  
Transistors  
4V Drive Nch+Pch MOSFET  
SP8M8  
zStructure  
zDimensions (Unit : mm)  
Silicon N-channel / P-channel MOSFET  
SOP8  
zFeatures  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Smal Surface Mount Package (SOP8).  
zApplication  
Power switching, DC / DC converter.  
Each lead has same dimensions  
zPackaging specifications  
zEquivalent circuit  
(8)  
(7)  
(6)  
(5)  
(8) (7) (6) (5)  
Package  
Taping  
TB  
Type  
Code  
Basic ordering unit (pieces)  
2500  
SP8M8  
2  
2  
(1) (2) (3) (4)  
(1) Tr1 (Nch) Source  
(2) Tr1 (Nch) Gate  
(3) Tr2 (Pch) Source  
(4) Tr2 (Pch) Gate  
(5) Tr2 (Pch) Drain  
(6) Tr2 (Pch) Drain  
(7) Tr1 (Nch) Drain  
(8) Tr1 (Nch) Drain  
1  
1  
(1)  
(2)  
(3)  
(4)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
A protection diode is included between the gate and  
the source terminals to protect the diode against static  
electricity when the product is in use. Use the protection  
circuit when the fixed voltages are exceeded.  
zAbsolute maximum ratings (Ta=25°C)  
Limits  
Parameter  
Symbol  
Unit  
Nchannel  
30  
Pchannel  
VDSS  
VGSS  
ID  
30  
20  
V
V
Drain-source voltage  
Gate-source voltage  
20  
Continuous  
Pulsed  
4.5  
A
6.0  
Drain current  
1  
IDP  
IS  
18  
A
24  
Continuous  
Pulsed  
1.6  
18  
A
1.6  
Source current  
(Body diode)  
1  
2  
ISP  
PD  
A
20  
W
°C  
°C  
Total power dissipation  
Channel temperature  
2
Tch  
150  
Tstg  
Storage temperature  
1 Pw10µs, Duty cycle1%  
2 MOUNTED ON A CERAMIC BOARD.  
55 to +150  
zThermal resistance  
Parameter  
Symbol  
Rth (ch-a)∗  
Limits  
62.5  
Unit  
Channel to ambient  
MOUNTED ON A CERAMIC BOARD.  
°C / W  
Rev.B  
1/5  

SP8M8FU6TB 替代型号

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