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SP8M51TB1

更新时间： 2024-02-07 18:26:26
品牌 Logo 应用领域
罗姆 - ROHM 开关脉冲光电二极管晶体管
页数 文件大小 规格书
1页 284K
描述
Power Field-Effect Transistor, 3A I(D), 100V, 0.19ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

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SP8M51TB1 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.77
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：3 A最大漏源导通电阻：0.19 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM)：12 A
表面贴装：YES端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SP8M51TB1 数据手册

  
SP8M51 | Complex Transistors | Transistors | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1  
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HOME, Products > Discrete Semiconductors > Transistors > Complex Transistors > SP8M51  
Transistors  
ICs  
4V Drive Nch+Pch MOSFET  
Discrete  
Semiconductors  
2010.07.21  
SP8M51 NEW  
The industry's highest  
efficiency MOSFETs for  
DC/DC power supplies:  
Transistors  
Design Model  
Data Sheet  
MOSFETs  
TM  
ECOMOS  
Bipolar Transistors  
2010.02.25  
Reliability information  
Operation notes  
Condition of soldering  
ROHM's ultra-low  
voltage drive MOSFETs  
Digital Transistors  
Complex Transistors  
Diodes  
Print out  
TM  
- ECOMOS - enable  
driving from a control  
voltage of 0.9V  
[ Product description ]  
Outline  
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the  
micro-processing technologies useful for wide range of applications.Broad  
lineup covering compact types, high-power types and complex types to meet  
various needs in the market.  
2010.01.22  
Opto Electronics  
ROHM continues to offer  
its lineup of ultra-low  
voltage MOSFETs  
ECOMOS™ series  
Passive Components  
Modules  
(Sub Systems)  
2009.05.29  
High speed trr High  
Voltage Resistance  
Features  
• 4V-drive type Nch+Pch Middle-power MOSFET  
TM  
PrestoMOS Series  
SOP8  
Product specifications  
2009.02.27  
ROHM's new RC series  
of 250V MOSFETs  
Dimensions  
Absolute maximum ratings (Ta=25ºC)  
Standard  
Rated parameters  
Conditions  
value  
Drain-Source voltage V  
(V)  
(V)  
100  
±20  
DSS  
Gate-Source voltage V  
GSS  
Drain current(continuous) I  
(A)  
D
±3  
1
Source current(body Di) I (A)  
S
* Click to enlarge.  
Mounted on a ceramic  
board  
Total power dissipation P (W)  
D
2
Equivalent circuit diagram  
Channel temperature Tch(ºC)  
Storage temperature Tstg(ºC)  
150  
-55 to +150  
Operation notes  
Pant No. explanation  
Package  
Absolute maximum ratings (Ta=25ºC)  
Standard  
Rated parameters  
Conditions  
value  
Drain-Source voltage V  
Gate-Source voltage V  
(V)  
-100  
±20  
DSS  
Taping specifications  
(V)  
D
GSS  
Soldering conditions  
>Surface mounted type  
transistors  
Drain current(continuous) I  
(A)  
±2.5  
-1  
>Leaded type transistors  
Source current(body Di) I (A)  
S
Mounted on a ceramic  
board  
Storage conditions  
Explanation of symbols  
FAQ  
Total power dissipation P (W)  
D
2
Channel temperature Tch(ºC)  
Storage temperature Tstg(ºC)  
150  
-55 to +150  
*The contents described here are just outline for introduction.  
Please obtain the specification sheets from us for thorough check before use.  
ROHM Internet Direct  
Shopping  
Status Product  
RoHS directive compliance  
Contact us  
Status  
*1  
Packing  
style  
Package  
quantity  
Samples  
*2  
Part No.  
SP8M51TB  
Package  
SOP8  
RoHS  
Yes  
Sales  
Inquiry  
Active  
Taping  
2500  
*1 Active: Production or current type Preparation: Preliminary type Preview: Development type  
*2 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.  
Others  
Please check the details on "Product List" for Others.  
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Copyright © 1997-2010 ROHM Co., Ltd.  
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http://www.rohm.com/products/discrete/transistor/complex_mos-mos/sp8m51/  
8/19/2010  
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