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SP8M7 PDF预览

SP8M7

更新时间: 2024-02-22 23:04:01
品牌 Logo 应用领域
罗姆 - ROHM 晶体开关晶体管功率场效应晶体管脉冲光电二极管
页数 文件大小 规格书
6页 78K
描述
Switching

SP8M7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.82Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):5 A
最大漏源导通电阻:0.082 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e2
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN COPPER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SP8M7 数据手册

 浏览型号SP8M7的Datasheet PDF文件第2页浏览型号SP8M7的Datasheet PDF文件第3页浏览型号SP8M7的Datasheet PDF文件第4页浏览型号SP8M7的Datasheet PDF文件第5页浏览型号SP8M7的Datasheet PDF文件第6页 
SP8M7  
Transistors  
Switching  
SP8M7  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Low on-resistance.  
SOP8  
5.0±0.2  
2) Built-in G-S Protection Diode.  
3) Small and Surface Mount Package (SOP8).  
zApplication  
Power switching, DC / DC converter.  
0.2±0.1  
0.4±0.1  
1.27  
0.1  
Each lead has same dimensions  
zEquivalent circuit  
zAbsolute maximum ratings (Ta=25°C)  
Limits  
Nchannel  
(8)  
(7)  
(6)  
(5)  
(8) (7) (6) (5)  
Parameter  
Symbol  
Unit  
Pchannel  
30  
Drain-source voltage  
Gate-source voltage  
VDSS  
VGSS  
ID  
30  
±20  
±5.0  
±20  
1.6  
6.4  
2
V
V
±20  
Continuous  
Pulsed  
±7.0  
±28  
A
Drain current  
2
2
1
(1) (2) (3) (4)  
IDP  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
1.6  
28  
A
(1) Tr1 (Nch) Source  
(2) Tr1 (Nch) Gate  
(3) Tr2 (Pch) Source  
(4) Tr2 (Pch) Gate  
(5) Tr2 (Pch) Drain  
(6) Tr2 (Pch) Drain  
(7) Tr1 (Nch) Drain  
(8) Tr1 (Nch) Drain  
1
2
ISP  
A
1
1
Total power dissipation (TC=25°C)  
Channel temperature  
PD  
2
W
°C  
°C  
Tch  
Tstg  
150  
150  
(1)  
(2)  
(3)  
(4)  
Storage temperature  
1 Pw10µs, Duty cycle1%  
2 MOUNTED ON A CERAMIC BOARD.  
55 to +150 55 to +150  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
A protection diode is included between the gate and  
the source terminals to protect the diode against static  
electricity when the product is in use. Use the protection  
circuit when the fixed voltages are exceeded.  
zThermal resistance (Ta=25°C)  
Parameter  
Symbol  
Rth (ch-A)  
Limits  
Unit  
°C / W  
Channel to ambient  
62.5  
MOUNTED ON A CERAMIC BOARD.  
1/5  

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