Datasheet > SP8M6FU6TB

SP8M6FU6TB

更新时间： 2024-11-25 19:41:07

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
6页	96K
描述
Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SP8M6FU6TB 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大漏极电流 (Abs) (ID)：	5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：	2 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

SP8M6FU6TB 数据手册

SP8M6

Transistors

Switching

SP8M6

zExternal dimensions (Unit : mm)

zFeatures

1) Low on-resistance.

SOP8

5.0 0.2

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (SOP8).

zApplication

Power switching, DC / DC converter.

0.2 0.1

0.4 0.1

1.27

0.1

Each lead has same dimensions

zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

Limits

Nchannel

(8)

(7)

(6)

(5)

(8) (7) (6) (5)

Parameter

Symbol

Unit

Pchannel

−30

−20

Drain-source voltage

Gate-source voltage

V_DSS

V_GSS

I_D

5.0

3.5

Continuous

Pulsed

∗2

Drain current

∗1

(1) (2) (3) (4)

I_DP

(1) Tr1 (Nch) Source

(2) Tr1 (Nch) Gate

(3) Tr2 (Pch) Source

(4) Tr2 (Pch) Gate

(5) Tr2 (Pch) Drain

(6) Tr2 (Pch) Drain

(7) Tr1 (Nch) Drain

(8) Tr1 (Nch) Drain

1.6

−1.6

−14

Source current

(Body diode)

Continuous

Pulsed

I_S

∗1

∗2

∗1

I_SP

°C

Total power dissipation

Channel temperature

P_D

(1)

(2)

(3)

(4)

150

Tch

Tstg

−55 to +150

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 MOUNTED ON A CERAMIC BOARD.

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

zThermal resistance (Ta=25°C)

Parameter

Symbol

Limits

62.5

Unit

∗

Channel to ambient

Rth (ch-a)

°C / W

∗MOUNTED ON A CERAMIC BOARD.

Rev.A

1/5

12 3 4 5 6

中文翻译

下载PDF

与SP8M6FU6TB相关器件

型号	品牌	获取价格	描述	数据表
SP8M6HZG	ROHM	获取价格	本产品是符合AEC-Q101标准的车载级MOSFET。在SOP8封装中内置30V的Nch
SP8M6HZGTB	ROHM	获取价格	Power Field-Effect Transistor,
SP8M6TB	ROHM	获取价格	Power Field-Effect Transistor, 5A I(D), 30V, 0.082ohm, 2-Element, N-Channel and P-Channel,
SP8M7	ROHM	获取价格	Switching
SP8M70TB	ROHM	获取价格	Power Field-Effect Transistor, 3A I(D), 250V, 1.63ohm, 2-Element, N-Channel and P-Channel,
SP8M70TB1	ROHM	获取价格	Power Field-Effect Transistor, N-Channel and P-Channel, Metal-oxide Semiconductor FET,
SP8M7TB	ROHM	获取价格	Power Field-Effect Transistor, 5A I(D), 30V, 0.082ohm, 2-Element, N-Channel and P-Channel,
SP8M8	ROHM	获取价格	Switching
SP8M8FRATB	ROHM	获取价格	Power Field-Effect Transistor, 6A I(D), 30V, 0.047ohm, 2-Element, N-Channel and P-Channel,
SP8M8FU6TB	ROHM	获取价格	Transistor,