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SP8M51 PDF预览

SP8M51

更新时间: 2024-11-25 09:10:07
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
11页 1183K
描述
4V Drive Nch + Pch MOSFET

SP8M51 数据手册

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Data Sheet  
4V Drive Nch + Pch MOSFET  
SP8M51  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET/  
Silicon P-channel MOSFET  
SOP8  
(8)  
(5)  
Features  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (SOP8).  
(1)  
(4)  
Application  
Switching  
Inner circuit  
(8)  
(7)  
(6)  
(5)  
Packaging specifications  
Package  
Taping  
TB  
Type  
Code  
(1) Tr1 Source  
2  
2  
(2) Tr1 Gate  
(3) Tr2 Source  
(4) Tr2 Gate  
(5) Tr2 Drain  
(6) Tr2 Drain  
(7) Tr1 Drain  
(8) Tr1 Drain  
Basic ordering unit (pieces)  
2500  
SP8M51  
1  
1  
(1)  
(2)  
(3)  
(4)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Absolute maximum ratings (Ta = 25C)  
Parameter Symbol  
Limits  
Unit  
Tr1 : N-ch Tr2 : P-ch  
Drain-source voltage  
VDSS  
VGSS  
ID  
100  
±20  
3.0  
12  
1.0  
100  
±20  
V
V
A
A
A
A
Gate-source voltage  
Continuous  
Pulsed  
2.5  
10  
1.0  
10  
Drain current  
*1  
IDP  
Is  
Continuous  
Pulsed  
Source current  
(Body Diode)  
*1  
*2  
Isp  
12  
2.0  
1.4  
150  
W / TOTAL  
PD  
Total power dissipation  
W / ELEMENT  
Channel temperature  
Tch  
C  
C  
55 to 150  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
Tstg  
*2 Mounted on a ceramic board.  
www.rohm.com  
2011.02 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/10  

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