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SP8M4HZG PDF预览

SP8M4HZG

更新时间: 2024-10-03 11:14:31
品牌 Logo 应用领域
罗姆 - ROHM 开关二极管
页数 文件大小 规格书
22页 4462K
描述
SP8M4HZG是符合AEC-Q101标准的车载级MOSFET。在SOP8封装中内置30V的Nch Pch MOSFET对。内置ESD保护二极管。适合开关用途。

SP8M4HZG 数据手册

 浏览型号SP8M4HZG的Datasheet PDF文件第2页浏览型号SP8M4HZG的Datasheet PDF文件第3页浏览型号SP8M4HZG的Datasheet PDF文件第4页浏览型号SP8M4HZG的Datasheet PDF文件第5页浏览型号SP8M4HZG的Datasheet PDF文件第6页浏览型号SP8M4HZG的Datasheet PDF文件第7页 
SP8M4HZG  
ꢀꢀ30V Nch+Pch Power MOSFET  
Datasheet  
ꢀꢀ  
lOutline  
Tr1:Nch Tr2:Pch  
30V -30V  
Symbol  
VDSS  
SOP8  
RDS(on)(Max.)  
18mΩ 28mΩ  
±9.0A ±7.0A  
2.0W  
ID  
PD  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
llFeatures  
1) Low on - resistance  
llInner circuit  
2) Small Surface Mount Package (SOP8)  
3) Pb-free plating ; RoHS compliant  
4) Halogen Free  
5) Sn100% plating  
6) AEC-Q101 Qualified  
llPackaging specifications  
Embossed  
Tape  
Packing  
llApplication  
Reel size (mm)  
330  
12  
Switching  
Tape width (mm)  
Quantity (pcs)  
Taping code  
Marking  
Type  
2500  
TB  
SP8M4  
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)  
a
Value  
Tr1:Nch Tr2:Pch  
Parameter  
Drain - Source voltage  
Symbol  
Unit  
VDSS  
ID  
30  
-30  
±7.0  
±28  
±20  
V
A
A
V
Continuous drain current  
Pulsed drain current  
±9.0  
±36  
±20  
*1  
IDP  
VGSS  
Gate - Source voltage  
*2  
PD  
2.0  
1.4  
Power dissipation  
total  
W
*3  
PD  
Tj  
Junction temperature  
150  
Tstg  
Operating junction and storage temperature range  
-55 to +150  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
© 2019 ROHMCo., Ltd. All rights reserved.  
ꢀ ꢀ  
1/19  
20200217 - Rev.001  

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