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SP8K24FRATB PDF预览

SP8K24FRATB

更新时间: 2024-11-25 13:13:55
品牌 Logo 应用领域
罗姆 - ROHM 开关
页数 文件大小 规格书
5页 153K
描述
Power Field-Effect Transistor, 6A I(D), 45V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

SP8K24FRATB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:8.03配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:45 V最大漏极电流 (ID):6 A
最大漏源导通电阻:0.037 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):24 A参考标准:AEC-Q101
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SP8K24FRATB 数据手册

 浏览型号SP8K24FRATB的Datasheet PDF文件第2页浏览型号SP8K24FRATB的Datasheet PDF文件第3页浏览型号SP8K24FRATB的Datasheet PDF文件第4页浏览型号SP8K24FRATB的Datasheet PDF文件第5页 
SP8K24  
Transistor  
Switching (45V, 6.0A)  
SP8K24  
zFeatures  
zExternal dimensions (Unit : mm)  
1) Built-in G-S Protection Diode.  
2) Small and Surface Mount Package (SOP8).  
SOP8  
5.0 0.2  
zApplications  
Power switching , DC / DC converter , Inverter  
0.2 0.1  
0.4 0.1  
zStructure  
1.27  
0.1  
Silicon N-channel  
MOS FET  
Each lead has same dimensions  
zPackaging dimensions  
Package  
Taping  
TB  
Code  
Basic ordering unit(pieces)  
2500  
zAbsolute maximum ratings (Ta=25°C)  
zEquivalent circuit  
It is the same ratings for the Tr. 1 and Tr. 2.  
(8)  
(7)  
(6)  
(5)  
(8) (7) (6) (5)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
Unit  
V
45  
20  
V
2  
2  
(1) (2) (3) (4)  
Continuous  
Pulsed  
±6.0  
A
Drain current  
(1) Tr1 Source  
(2) Tr1 Gate  
(3) Tr2 Source  
(4) Tr2 Gate  
(5) Tr2 Drain  
(6) Tr2 Drain  
(7) Tr1 Drain  
(8) Tr1 Drain  
*1  
IDP  
±24  
A
1  
1  
IS  
Continuous  
Pulsed  
1
A
Source current  
(Body diode)  
A
*1  
*2  
ISP  
24  
(1)  
(2)  
(3)  
(4)  
2
1.4  
W/TOTAL  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
PD  
Total power dissipation  
Chanel temperature  
W/ELEMENT*2  
A protection diode is included between the gate and  
the source terminals to protect the diode against static  
electricity when the product is in use. Use the protection  
circuit when the fixed voltages are exceeded.  
oC  
oC  
Tch  
150  
Range of Storage temperature  
Tstg  
-55 to +150  
*1 PW10µs、Duty cycle1%  
1/4  

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