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SP8K31FRATB PDF预览

SP8K31FRATB

更新时间: 2024-02-13 06:04:25
品牌 Logo 应用领域
罗姆 - ROHM 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 1106K
描述
Power Field-Effect Transistor, 3.5A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

SP8K31FRATB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.94
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):3.5 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):14 A
参考标准:AEC-Q101表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SP8K31FRATB 数据手册

 浏览型号SP8K31FRATB的Datasheet PDF文件第2页浏览型号SP8K31FRATB的Datasheet PDF文件第3页浏览型号SP8K31FRATB的Datasheet PDF文件第4页浏览型号SP8K31FRATB的Datasheet PDF文件第5页浏览型号SP8K31FRATB的Datasheet PDF文件第6页浏览型号SP8K31FRATB的Datasheet PDF文件第7页 
SP8K31FRA  
Transistor  
AEC-Q101 Qualified  
4V Drive Nch+Nch MOSFET  
SP8K31FRA  
zDimensions (Unit : mm)  
zStructure  
SOP8  
Silicon N-channel  
MOSFET  
zFeatures  
1) Built-in G-S Protection Diode.  
2) Small surface Mount Package (SOP8).  
zApplications  
Each lead has same dimensions  
Switching  
zEquivalent circuit  
zPackaging dimensions  
(8)  
(7)  
(6)  
(5)  
(8) (7) (6) (5)  
Package  
Taping  
TB  
Type  
Code  
Basic ordering unit (pieces)  
2500  
SP8K31FRA  
2  
2  
(1) (2) (3) (4)  
(1) Tr1 Source  
(2) Tr1 Gate  
(3) Tr2 Source  
(4) Tr2 Gate  
(5) Tr2 Drain  
(6) Tr2 Drain  
(7) Tr1 Drain  
(8) Tr1 Drain  
1  
1  
(1)  
(2)  
(3)  
(4)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
A protection diode is included between the gate and  
the source terminals to protect the diode against static  
electricity when the product is in use. Use the protection  
circuit when the fixed voltages are exceeded.  
zAbsolute maximum ratings (Ta=25°C)  
<It is the same ratings for the Tr1 and Tr2.>  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
Limits  
Unit  
V
VDSS  
VGSS  
ID  
60  
20  
V
Continuous  
Pulsed  
3.5  
A
Drain current  
1  
IDP  
14  
1.0  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
A
1  
2  
ISP  
14  
A
Total power dissipation  
Channel temperature  
PD  
2.0  
W
°C  
°C  
Tch  
Tstg  
150  
Range of storage temperature  
1 Pw 10µs, Duty cycle 1%  
2 Mounted on a ceramic board.  
55 to +150  
1/4  

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