Datasheet > SP8K41HZGTB

SP8K41HZGTB

更新时间： 2024-01-01 23:09:45

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
14页	1794K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SP8K41HZGTB 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

SP8K41HZGTB 数据手册

SP8K41HZG

Datasheet

ꢀꢀ80V Nch+Nch Power MOSFET

ꢀꢀ

llOutline

ꢀ

V_DSS

80V

130mΩ

±3.4A

2.0W

R_DS(on)(Max.)

SOP8

I_D

ꢀ

P_D

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

llInner circuit

llFeatures

1) Low on - resistance

2) Small Surface Mount Package (SOP8)

3) Pb-free plating ; RoHS compliant

4) Halogen free

5) Sn100% plating

6) AEC-Q101 Qualified

llPackaging specifications

Packing

Embossed

Tape

llApplication

Reel size (mm)

330

Switching

Tape width (mm)

Quantity (pcs)

Taping code

Marking

Type

2500

SP8K41

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified) <Tr1 and Tr2>

Parameter

Drain - Source voltage

Symbol

V_DSS

I_D

Value

Unit

Continuous drain current

Pulsed drain current

±3.4

I_DP

±13.6

±20

V_GSS

Gate - Source voltage

P_D

2.0

Power dissipation (total)

P_D

1.4

T_j

Junction temperature

150

℃

T_stg

Operating junction and storage temperature range

-55 to +150

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