是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
风险等级: | 5.75 | 其他特性: | AVALANCHE RATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 2.3 A | 最大漏源导通电阻: | 0.057 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 29 pF |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SP001017950 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
SP001020716 | INFINEON |
获取价格 |
Rectifier Diode, | |
SP001028756 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001057184 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001058576 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001058578 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001058622 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001058626 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001058628 | INFINEON |
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0.4A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, | |
SP001058720 | INFINEON |
获取价格 |
Power Field-Effect Transistor, |