5秒后页面跳转
SP000999336 PDF预览

SP000999336

更新时间: 2024-11-12 05:09:23
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网光电二极管晶体管
页数 文件大小 规格书
9页 567K
描述
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

SP000999336 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.75其他特性:AVALANCHE RATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):2.3 A最大漏源导通电阻:0.057 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):29 pF
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
参考标准:AEC-Q101表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SP000999336 数据手册

 浏览型号SP000999336的Datasheet PDF文件第2页浏览型号SP000999336的Datasheet PDF文件第3页浏览型号SP000999336的Datasheet PDF文件第4页浏览型号SP000999336的Datasheet PDF文件第5页浏览型号SP000999336的Datasheet PDF文件第6页浏览型号SP000999336的Datasheet PDF文件第7页 
BSS806NE  
OptiMOS2 Small-Signal-Transistor  
Features  
Product Summary  
VDS  
20  
57  
82  
2.3  
V
• N-channel  
RDS(on),max  
VGS=2.5 V  
VGS=1.8 V  
mW  
• Enhancement mode  
• Ultra Logic level (1.8V rated)  
ID  
A
• ESD protected  
• Avalanche rated  
• Qualified according to AEC Q101  
• 100% lead-free; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
PG-SOT23  
3
1
2
Type  
Package  
SOT23  
Tape and Reel  
Marking  
YIs  
Halogen Free  
Yes  
Packing  
Non dry  
BSS806NE  
H6327: 3000 pcs/ reel  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T A=25 °C  
T A=70 °C  
T A=25 °C  
Continuous drain current  
2.3  
1.9  
9.3  
A
I D,pulse  
Pulsed drain current  
E AS  
I D=2.3 A, R GS=25 W  
Avalanche energy, single pulse  
10.8  
6
mJ  
I D=2.3 A, V DS=16 V,  
di /dt =200 A/µs,  
T j,max=150 °C  
Reverse diode dv /dt  
dv /dt  
kV/µs  
V GS  
Gate source voltage  
±8  
0.5  
V
Power dissipation1)  
P tot  
T A=25 °C  
W
°C  
T j, T stg  
Operating and storage temperature  
ESD Class  
-55 ... 150  
1C(1kV to 2kV)  
260 °C  
JESD22-A114 -HBM  
Soldering Temperature  
IEC climatic category; DIN IEC 68-1  
55/150/56  
Rev 2.01  
page 1  
2014-01-16  

与SP000999336相关器件

型号 品牌 获取价格 描述 数据表
SP001017950 INFINEON

获取价格

Insulated Gate Bipolar Transistor,
SP001020716 INFINEON

获取价格

Rectifier Diode,
SP001028756 INFINEON

获取价格

Power Field-Effect Transistor,
SP001057184 INFINEON

获取价格

Power Field-Effect Transistor,
SP001058576 INFINEON

获取价格

Power Field-Effect Transistor,
SP001058578 INFINEON

获取价格

Power Field-Effect Transistor,
SP001058622 INFINEON

获取价格

Power Field-Effect Transistor,
SP001058626 INFINEON

获取价格

Power Field-Effect Transistor,
SP001058628 INFINEON

获取价格

0.4A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET,
SP001058720 INFINEON

获取价格

Power Field-Effect Transistor,