Datasheet > SP001059326

SP001059326

更新时间： 2024-11-11 21:00:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	564K
描述
Small Signal Field-Effect Transistor,

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技术参数
数据手册

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SP001059326 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.73
Base Number Matches：	1

SP001059326 数据手册

BSP372N

OptiMOS^™Small-Signal-Transistor

Features

Product Summary

V_DS

100

0.23

0.27

1.8

• N-channel

R_DS(on),max

V_GS=10 V

V_GS=4.5 V

• Enhancement mode

• Logic Level (4.5V rated)

I_D

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

PG-SOT223

Type

Package

SOT223

Tape and Reel

Marking

Halogen-Free

Yes

Packing

Non dry

BSP372N

H6327: 1000 pcs/ reel

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

Continuous drain current

1.8

1.5

7.2

I _D,pulse

Pulsed drain current

E _AS

I _D=1.8 A, R _GS=25 W

Avalanche energy, single pulse

I _D=1.8 A, V _DS=80 V,

di /dt =200 A/µs,

T _j,max=150 °C

Reverse diode dv /dt

dv /dt

kV/µs

V _GS

Gate source voltage

±20

Power dissipation¹⁾

P _tot

T _A=25 °C

1.8

°C

T _j, T _stg

Operating and storage temperature

ESD Class

-55 ... 150

0 (<250V)

260 °C

JESD22-A114 -HBM

Soldering Temperature

IEC climatic category; DIN IEC 68-1

55/150/56

Rev 2.0

page 1

2013-04-03

12 3 4 5 6 7...9

中文翻译

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