Datasheet > SP001057184

SP001057184

更新时间： 2024-11-11 20:55:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	204K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SP001057184 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

SP001057184 数据手册

IPB180N10S4-02

OptiMOS^TM-T2 Power-Transistor

Product Summary

V_DS

R_DS(on)

I_D

100

2.5

mΩ

180

Features

• N-channel - Enhancement mode

PG-TO263-7-3

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPB180N10S4-02

PG-TO263-7-3

4N1002

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C, V_GS=10V¹⁾

T _C=100°C, V_GS=10V²⁾

I _D

Continuous drain current

180

171

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

720

1110

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=90A

180

V_GS

P_tot

±20

T _C=25°C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2013-01-30

12 3 4 5 6 7...9

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