Datasheet > SP001058626

SP001058626

更新时间： 2024-09-17 19:31:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	421K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SP001058626 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

SP001058626 数据手册

BSP298

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Avalanche rated

• V

= 2.1 ... 4.0 V

GS(th)

• Pb-free lead plating; RoHS compliant

• Qualified according to AEC Q101

•

Halogenfree according to IEC61249221

Pin 1

Pin 2

Pin 3

Pin 4

Type

Package

PG-SOT223

Marking

V_DS

I_D

R_DS(on)

BSP298

400 V

0.5 A

Ω

BSP298

Type

Pb-free

Tape and Reel Information Packaging

H6327 Dry

BSP298

Yes

Maximum Ratings

Parameter

Symbol

Values

0.5

Unit

Continuous drain current

T = 26 °C

DC drain current, pulsed

Dpuls

T = 25 °C

Avalanche energy, single pulse

Ω

I = 1.35 A, V = 50 V, R = 25

L = 125 mH, T = 25 °C

130

Gate source voltage

Power dissipation

tot

T = 25 °C

1.8

ESD Class

Class 1b

JESD22-A114-HBM

Rev. 2.6

2012-11-29

12 3 4 5 6 7...10

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