Datasheet > SP001058830

SP001058830

更新时间： 2024-09-17 19:49:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	426K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SP001058830 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

SP001058830 数据手册

BSP315P

SIPMOS Small-Signal-Transistor

Features

Product Summary

• P-Channel

Drain source voltage

-60

0.8

• Enhancement mode

Drain-Source on-state resistance R

Ω

DS(on)

• Avalanche rated

• Logic Level

Continuous drain current

-1.17

• dv/dt rated

Pin 1 Pin2/4 PIN 3

• Qualified according to AEC Q101

VPS05163

Type

Package

Tape and Reel Information Marking

L6327: 1000 pcs/reel BSP315P

Packaging

PG-SOT223

BSP315P

Non dry

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

-1.17

-0.94

T = 70 °C

Pulsed drain current

-4.68

D puls

T = 25 °C

Avalanche energy, single pulse

I = -1.17 A , V = -25 V, R = 25 Ω

Avalanche energy, periodic limited by T

0.18

jmax

Reverse diode dv/dt

dv/dt

kV/µs

I = -1.17 A, V = -48 V, di/dt = 200 A/µs,

= 150 °C

jmax

Gate source voltage

Power dissipation

±20

1.8

tot

T = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

ESD Class; JESD22-A114-HBM

-55...+150

55/150/56

Class 0

°C

stg

Rev.1.6

Page 1

2012-03-29

12 3 4 5 6 7...9

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