是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.84 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 130 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 0.4 A | 最大漏源导通电阻: | 4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 1.6 A | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SP001058720 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001058768 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001058788 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001058794 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001058812 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001058830 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001059326 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, | |
SP001059328 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, | |
SP001059330 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
SP001061280 | INFINEON |
获取价格 |
30A, 55V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, |