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SP001058628 PDF预览

SP001058628

更新时间: 2024-11-12 07:13:27
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲光电二极管晶体管
页数 文件大小 规格书
10页 502K
描述
0.4A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET,

SP001058628 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.84其他特性:AVALANCHE RATED
雪崩能效等级(Eas):130 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (ID):0.4 A最大漏源导通电阻:4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):1.6 A参考标准:AEC-Q101
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SP001058628 数据手册

 浏览型号SP001058628的Datasheet PDF文件第2页浏览型号SP001058628的Datasheet PDF文件第3页浏览型号SP001058628的Datasheet PDF文件第4页浏览型号SP001058628的Datasheet PDF文件第5页浏览型号SP001058628的Datasheet PDF文件第6页浏览型号SP001058628的Datasheet PDF文件第7页 
BSP299  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
• Avalanche rated  
V  
= 2.1 ... 4.0 V  
GS(th)  
• Pb-free lead plating; RoHS compliant  
Qualified according to AEC Q101  
Pin 1  
G
Pin 2  
D
Pin 3  
S
Pin 4  
D
Halogen­free according to IEC61249­2­21  
Type  
Package  
Marking  
VDS  
ID  
RDS(on)  
BSP 299  
500 V  
0.4 A  
4
SOT-223  
BSP299  
Type  
Pb-free  
Tape and Reel Information  
Packaging  
BSP 299  
Yes  
H6327: 1000 pcs / reel  
Dry  
Maximum Ratings  
Parameter  
Symbol  
Values  
0.4  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 °C  
1.6  
A
Avalanche energy, single pulse  
E
mJ  
AS  
I = 1.2 A, R = 25  
D
GS  
T = 25 °C  
130  
20  
j
Gate source voltage  
Power dissipation  
V
V
GS  
P
W
tot  
T = 25 °C  
1.8  
A
ESD Class  
Class 1b  
JESD22-A114-HBM  
Rev 2.4  
1
2012-11­29  

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