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SP001058720 PDF预览

SP001058720

更新时间: 2024-11-11 21:15:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 390K
描述
Power Field-Effect Transistor,

SP001058720 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.83
Base Number Matches:1

SP001058720 数据手册

 浏览型号SP001058720的Datasheet PDF文件第2页浏览型号SP001058720的Datasheet PDF文件第3页浏览型号SP001058720的Datasheet PDF文件第4页浏览型号SP001058720的Datasheet PDF文件第5页浏览型号SP001058720的Datasheet PDF文件第6页浏览型号SP001058720的Datasheet PDF文件第7页 
BSP300  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
• Avalanche rated  
V  
= 2.0... 4.0 V  
GS(th)  
Pb-free lead plating; RoHS compliant  
• Qualified according to AEC Q101  
Halogen­free according to IEC61249­2­21  
Pin 1  
G
Pin 2  
D
Pin 3  
S
Pin 4  
D
Type  
Package  
PG-SOT223  
Marking  
VDS  
ID  
RDS(on)  
20  
BSP300  
800 V  
0.19 A  
BSP300  
Type  
BSP300  
RoHS compliant  
Tape and Reel Information Packaging  
H6327  
Dry  
Yes  
Maximum Ratings  
Parameter  
Symbol  
Values  
0.19  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 °C  
0.76  
A
Avalanche energy, single pulse  
E
mJ  
AS  
I = 0.8 A, V = 50 V, R = 25  
D
DD  
GS  
L = 105 mH, T = 25 °C  
36  
20  
j
Gate source voltage  
Power dissipation  
V
V
GS  
P
W
tot  
T = 25 °C  
1.8  
A
ESD Class  
Class 1a  
JESD22-A114-HBM  
Rev 2.2  
Page 1  
2012-11-29  

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