Datasheet > SP001058812

SP001058812

更新时间： 2024-09-17 20:04:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	481K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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SP001058812 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

SP001058812 数据手册

BSP135

SIPMOS^®Small-Signal-Transistor

Product Summary

V_DS

Features

600

• N-channel

• Depletion mode

R_DS(on),max

I_DSS,min

0.02

• dv /dt rated

• Available with V _GS(th)indicator on reel

• Pb-free lead plating; RoHS compliant

• Qualified according to AEC Q101

PG-SOT223

•

Halogenfree according to IEC61249221

Type

Package

Tape and Reel Information

Marking

Packaging

Type

BSP135

Package

PG-SOT223

Tape and Reel Information

H6327: 1000 pcs/reel

Marking

BSP135

Packaging

Non dry

BSP135

PG-SOT223

L6327: 1000 pcs/reel

H6906: 1000 pcs/reel

BSP135

Non dry

sorted in V

bands 1)

BSP135

PG-SOT223

L6906: 1000 pcs/reel

BSP135

Non dry

GS(th)

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

Continuous drain current

0.12

0.10

0.48

I _D,pulse

dv /dt

V _GS

Pulsed drain current

Reverse diode dv /dt

Gate source voltage

I _D=0.12 A, V _DS=20 V,

di /dt =200 A/µs,

T _j,max=150 °C

kV/µs

±20

ESD Class

(JESD22-A114-HBM)

1A(>250V,<500V)

P _tot

T _A=25 °C

Power dissipation

1.8

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

see table on next page and diagram 11

Rev. 1.33

page 1

2012-11-29

12 3 4 5 6 7...9

中文翻译

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