Datasheet > SP001058576

SP001058576

更新时间： 2024-11-11 20:09:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	531K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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SP001058576 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.73
Base Number Matches：	1

SP001058576 数据手册

Rev. 2.2

BSP125



SIPMOS Power-Transistor

Product Summary

Feature

600

Ω

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

DS(on)

0.12

PG-SOT223

Pb-free lead plating; RoHS compliant

•

x Qualified according to AEC Q101

•

Halogenfree according to IEC61249221

Marking Packaging

Non dry

BSP125

BSP125 Non dry

Type

Package

RoHS compliant

Tape and Reel Information

H6433: 4000 pcs/reel

H6327: 1000 pcs/reel

PG-SOT223 Yes

BSP125

PG-SOT223

Yes

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

0.12

0.1

T =70°C

0.48

Pulsed drain current

D puls

T =25°C

kV/µs

Reverse diode dv/dt

dv/dt

I =0.12A, V =480V, di/dt=200A/µs, T =175°C

jmax

Gate source voltage

1A (>250V, <500V)

1.8

tot

ESD Class (JESD22-A114-HBM)

Power dissipation

T =25°C, T =25

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +150

55/150/56

stg

Page 1

2012-11-27

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