WTE
POWER SEMICONDUCTORS
Pb
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
SK12 – S110
Features
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Schottky Barrier Chip
!
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Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage Application
Guard Ring Die Construction
B
D
A
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ E
SMB/DO-214AA
Mechanical Data
Dim
A
Min
3.30
4.06
1.91
0.152
5.08
2.13
0.051
0.76
Max
3.94
4.70
2.11
!
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Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
B
C
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Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.093 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
0.305
5.59
2.44
0.203
1.27
E
F
G
H
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol SK12 SK13 SK14 SK15 SK16 SK18 SK19 S110
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
14
30
21
40
28
50
35
60
42
80
56
90
64
100
71
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current @TL = 75°C
1.0
30
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
A
Forward Voltage
@IF = 1.0A
VFM
IRM
0.50
0.70
0.85
V
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 100°C
@TA = 25°C
0.5
20
mA
RꢀJL
RꢀJA
30
95
Typical Thermal Resistance (Note 1)
°C/W
Operating Temperature Range
Storage Temperature Range
Tj
-65 to +125
-65 to +150
°C
°C
TSTG
Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area.
SK12 – S110
1 of 4
© 2006 Won-Top Electronics