Datasheet > SK150DGL12T4TE1

SK150DGL12T4TE1

更新时间： 2023-12-06 20:08:26

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
6页	513K
描述
Bridge Rectifier Modules SEMITOP E1 (63x34x12)

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中文翻译

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数据手册

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SK150DGL12T4TE1 数据手册

SK150DGL12T4TE1

Absolute Maximum Ratings

Symbol Conditions

Chopper - IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

100

-20 ... 20

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®E1

V_CC= 800 V

3-phase Bridge Rectifier with

Chopper

_GE= V_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES= V_CES

1200 V

≤

Engineering Sample

SK150DGL12T4TE1

Target Data

T_j

Freewheeling - Diode

T_j= 25 °C

-40 ... 175

V_RRM

I_F

1200

°C

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

Features*

• Optimized design for superior thermal

performance

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

• Low inductive design

I_FRM

I_FSM

• Press-Fit contact technology

• 1200V Trench IGBT4 (T4)

• Robust and soft switching CAL4F

diode technology

T_j= 25 °C

T_j= 150 °C

10 ms

sin 180°

-40 ... 175

T_j

• PEP rectifier diode technology for

enhanced power and environmental

robustness

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

Rectifier - Diode

T_j= 25 °C

V_RRM

I_D

1600

158

127

196

158

635

490

2020

1200

-40 ... 175

A²s

°C

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

Typical Applications

I_D

λ_paste=2.5 W/(mK)

T_j= 175 °C

• Motor drives

• Air conditioning

• Auxiliary Inverters

I_FSM

i²t

10 ms

sin 180°

Remarks

• Recommended T_j,op=-40 ...+150 °C

10 ms

sin 180°

T_j

Module

I_t(RMS)

T_stg

∆T_terminalat PCB joint = 30 K, per pin

module without TIM

AC, sinusoidal, 1 min

-40 ... 125

2500

°C

V_isol

Characteristics

Symbol Conditions

IGBT - Chopper

min.

typ.

max.

Unit

I_C= 50 A

T_j= 25 °C

V_CE(sat)

1.85

2.20

2.10

2.40

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.80

0.70

5.8

0.90

0.80

6.5

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

V_GE= V_CE, I_C= 1.7 mA

Rev. 0.2 – 17.03.2022

12 3 4 5 6

中文翻译

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